منابع مشابه
Chemically Modulated Graphene Diodes
We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and lon...
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Self-Switching Diodes (SSD) are two terminal Nano-devices that rectify current based purely on a field effect, without the need for a third gate terminal to apply this field. They can be fabricated simply by etching two L-shaped trenches back-to-back giving rise to asymmetrical nanowires that have rectifying characteristics similar to those of conventional diodes [1]. SSDs can operate at high f...
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We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...
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A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providin...
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We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2013
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl400674k